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 2SC4416
Silicon NPN Epitaxial
Application
UHF Frequency conversion, Wide band amplifier
Outline
2SC4416
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) hFE Cob fT CG Min 25 -- -- -- -- 50 -- 3.0 15 Typ -- -- -- -- -- -- 0.85 3.8 19 Max -- 0.1 10 0.3 0.3 180 1.3 -- -- pF GHz dB Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCB = 13 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 0.8 mA, f in = 900 MHz, f OSC = 930 MHz (-5dBm), f out = 30 MHz
Noise figure Note: Marking is "XB-".
NF
--
8
1.2
dB
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2SC4416
3
2SC4416
4
2SC4416
S Parameters (Emitter Common)
Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP) , ZO = 50
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2SC4416
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2SC4416
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.777 0.636 0.540 0.494 0.468 0.452 0.439 0.437 0.428 0.429 ANG. -47.6 -82.6 -107.9 -125.0 -138.0 -147.7 -155.4 -162.0 -167.9 -173.8 S21 MAG. 12.318 9.212 6.901 5.480 4.547 3.859 3.374 2.982 2.691 2.457 ANG. 146.4 124.5 110.6 101.6 94.5 89.0 84.2 80.0 76.1 72.5 S12 MAG. 0.037 0.058 0.071 0.079 0.087 0.095 0.103 0.112 0.122 0.131 ANG. 66.8 55.3 51.0 50.7 52.0 53.7 55.7 57.5 59.6 61.2 S22 MAG. 0.878 0.702 0.586 0.520 0.480 0.452 0.436 0.427 0.419 0.415 ANG. -20.1 -30.7 -34.8 -36.4 -37.2 -38.4 -39.9 -41.3 -43.4 -45.0
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.627 0.492 0.432 0.411 0.395 0.394 0.392 0.390 0.388 0.387 ANG. -64.8 -102.5 -125.3 -139.4 -150.3 -157.4 -163.5 -168.7 -173.1 -177.0 S21 MAG. 17.938 11.621 8.190 6.332 5.168 4.350 3.784 3.333 2.995 2.731 ANG. 135.2 113.8 102.4 95.1 89.5 84.8 80.9 77.1 73.8 70.5 S12 MAG. 0.032 0.047 0.058 0.069 0.079 0.090 0.102 0.113 0.127 0.138 ANG. 63.2 56.4 57.2 59.6 61.7 63.7 65.2 66.5 67.3 67.9 S22 MAG. 0.766 0.560 0.460 0.412 0.385 0.366 0.356 0.351 0.347 0.345 ANG. -27.4 -35.3 -36.1 -36.2 -36.2 -36.8 -38.3 -39.7 -41.6 -43.5
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2SC4416
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 2.182 4.596 8.314 12.329 16.310 19.817 22.727 25.355 27.058 28.966 IMAG. 5.286 9.838 13.395 15.566 16.548 16.562 15.707 14.778 13.073 11.370 Yfe (mS) REAL 149.226 138.489 121.525 103.171 83.990 66.015 49.791 36.105 23.869 13.481 IMAG. -28.448 -53.561 -74.164 -87.811 -97.188 -100.594 -101.015 -98.928 -95.428 -92.170 Yre (mS) REAL -0.004 -0.005 -0.025 -0.044 -0.068 -0.104 -0.136 -0.165 -0.192 -0.260 IMAG. -0.459 -0.941 -1.460 -1.955 -2.451 -2.958 -3.433 -3.943 -4.438 -4.944 Yoe (mS) REAL 0.069 0.137 0.086 0.111 0.080 0.154 0.226 0.246 0.307 0.328 IMAG. 0.745 1.465 2.251 3.025 3.813 4.618 5.461 6.241 7.067 7.902
Test Condition VCE = 5 V, IC = 10 mA
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 4.137 7.995 12.296 15.691 18.471 20.418 21.855 23.059 23.687 24.366 IMAG. 6.218 10.306 12.125 12.521 12.026 11.618 10.887 10.127 9.375 8.807 Yfe (mS) REAL 246.938 193.805 140.844 100.830 70.237 48.828 33.158 20.494 11.528 4.277 IMAG. -82.680 -128.092 -144.955 -145.272 -139.959 -130.672 -121.649 -112.454 -103.839 -96.921 Yre (mS) REAL -0.004 -0.015 -0.027 -0.024 -0.049 -0.032 -0.024 -0.017 -0.013 -0.013 IMAG. -0.462 -0.937 -1.432 -1.913 -2.396 -2.894 -3.394 -3.889 -4.418 -4.905 Yoe (mS) REAL 0.139 0.220 0.322 0.404 0.410 0.492 0.474 0.502 0.446 0.471 IMAG. 0.754 1.578 2.338 3.028 3.817 4.460 5.196 5.950 6.699 7.486
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2SC4416
Conversion Gain and Noise Figure Test Circuit
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2SC4416
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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